advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 4m fast switching characteristic i d 20a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without n otice 201501122 1 ap92u03gm-hf rating 30 + 20 20 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 storage temperature range drain current, v gs @ 10v 3 16 pulsed drain current 1 80 halogen-free product thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 s s s g d d d d so-8 g d s ap92u03 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 4 m v gs =4.5v, i d =12a - - 6 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 50 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 36 58 nc q gs gate-source charge v ds =15v - 7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 21 - nc t d(on) turn-on delay time v ds =15v - 12 - ns t r rise time i d =1a - 10 - ns t d(off) turn-off delay time r g =3.3 - 53 - ns t f fall time v gs =10v - 25 - ns c iss input capacitance v gs =0v - 2650 4240 pf c oss output capacitance v ds =25v - 415 - pf c rss reverse transfer capacitance f=1.0mhz - 350 - pf r g gate resistance f=1.0mhz - 1.2 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 36 - ns q rr reverse recovery charge di/dt=100a/s - 33 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap92u03gm-hf 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad.
ap92u03gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 3 4 5 6 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 12 a t a =25 0 20 40 60 80 0 1 2 3 4 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 25 o c 10 v 7.0 v 6.0 v 5.0 v v g =4.0v 0 20 40 60 80 0 1 2 3 4 5 6 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10 v 7.0 v 6.0 v 5.0 v v g =4.0v 0.4 0.9 1.4 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 20a v g =10v 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
ap92u03gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0 20 40 60 80 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 15 v i d = 20 a 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100 ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
marking information 5 ap92u03gm-hf 92u03gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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